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1. 1. Optimizing the RF-parameters for an III-V FinFET

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Hugo Sjöberg; [2015]
   Keywords : Technology and Engineering;

   Abstract : Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind and Lars-Erik Wernerssons work. Using this model, the gate-source parasitic capacitance, the gate-drain parasitic capacitance, the source and drain resistances were simulated. READ MORE