Evaluation of Atomic Layer Etching Possibility at Lund Nano Lab

Abstract: In modern electronics, device downscaling demands atomic precision control and Atomic Layer Etching (ALE) can provide this prime capability with minute device damage. ALE, also known as layer-by-layer etching, is a technique of removing atomically thin layers from the surface of materials in a controlled way. This technique is now very crucial for nanofabrication and semiconductor industry in order to achieve atomic scale resolution. This is why the overall goal of this diploma project was to investigate the possibility for ALE at Lund Nano Lab and to reveal different limitations with our current equipment. In order to achieve this goal we have done experiments with conventional system used for reactive ion etching. In addition, the ALE has been done on GaP nanowires and on Si surface patterned with high-resolution Electron Beam Lithography (EBL). The results of these experiments indicate that the process can be used to make stamps for nanoimprint lithography in a highly controlled way and that the low ion energy etching process can be used for direct nanowire splitting. We show different limitations for ALE with our current equipment and provide recommendations for new equipment dedicated for this process. In this way, the work presented here opens up the possibility for further studies of ALE with conventional equipment, shows some aspects of it’s importance for nanofabrication and suggests new applications for the ALE processes.