Essays about: "RF power transistor"

Showing result 1 - 5 of 22 essays containing the words RF power transistor.

  1. 1. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

    University essay from KTH/Tillämpad fysik

    Author : Wilhelm Holmberg; [2023]
    Keywords : High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

    Abstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE

  3. 2. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Rungeng Xu; [2022]
    Keywords : E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Abstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE

  4. 3. 1kW Class-E solid state power amplifier for cyclotron RF-source

    University essay from Uppsala universitet/FREIA

    Author : Stefan Book; [2018]
    Keywords : Class-E; LDMOS; high efficiency; high power; VHF; power amplifier; accelerator; cyclotron;

    Abstract : This thesis discusses the design, construction and testing of a highefficiency, 100 MHz, 1 kW, Class-E solid state power amplifier. The design was performed with the aid of computer simulations using electronic design software (ADS). The amplifier was constructed around Ampleon's BLF188XR LDMOS transistor in a single ended design. READ MORE

  5. 4. Integrated antenna switch for NB-IoT

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Fredrik Zetterblom; Yunus Dawji; [2018]
    Keywords : T R Transmit Receive switch; RF switch; integrated RF switch; Narrowband Internet of Things NB-IoT ; CMOS; frontend; Technology and Engineering;

    Abstract : Transistors are used in all digital devices today. The demand of faster and smaller devices such as mobile telephones and computers constantly drives the develop- ment of smaller transistor technologies. Transistors can also be used in analog applications. Today there are commercial chips with both radio and digital sys- tems in the same package. READ MORE

  6. 5. Development of III-V RF Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Josefine Rost; Anna Wagnström; [2018]
    Keywords : Nanowire MOSFET; RF; COMSOL Multiphysics; Semiconductor processing; III-V Materials; Technology and Engineering;

    Abstract : The silicon MOSFET is one of the most important components used in modern electronics. The pursuit to continue fulfilling Moore’s law by scaling transistors to even smaller sizes have driven the development forward for CMOS technologies and new approaches have been necessary. READ MORE