Flashlamp Annealing for Improved Ferroelectric Junctions

Abstract: The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. Thermal annealing in the millisecond duration were used in the efforts of reducing diffusion through the HZO film and increase device performance. Electrical characterization showed a lower defect density and improved endurance of the FLA samples compared to the RTP counterparts. The use of multiple low-energy flashes and pre-crystallization during ALD growth was also investigated for further improvement on device performance. Overall, this work provides valuable insight into low thermal budget integration of HZO on III-V semiconductors.