Essays about: "iii-v"

Showing result 16 - 20 of 64 essays containing the word iii-v.

  1. 16. Optical studies of wrapgated InP nanowires

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Henrik Torstensson; [2019]
    Keywords : Nanowire; InP; ITO; wrapgate; photoluminescence; interface states.; Physics and Astronomy;

    Abstract : This thesis describes optical spectroscopy on III-V semiconductor InP nanowires (NW) with a transparent indium-tin-oxide (ITO) gate electrode. The NWs are arranged both as vertical arrays with a wrap all around gate and as single lateral NWs with an omega-shaped gate for increased electrostatic effect. READ MORE

  3. 17. Passivation of Gallium Arsenide Nanowires for Solar Cells

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Austin Irish; [2019]
    Keywords : nanowires; semiconductors; solar cells; photovoltaics; passivation; electronics; chemistry; polymers; hydrazine; plasma; gallium; arsenic; iii-v; epitaxy; photoluminescence; time-resolved; spectroscopy; Physics and Astronomy;

    Abstract : A strategic and diverse set of passivation methods for gallium arsenide nanowires wasstudied. Using a time-resolved photoluminescence setup at100 Kand300 K, the radiativerecombination of charge carriers was resolved on a picosecond time scale. READ MORE

  4. 18. A 100GHz Millimeter-Wave Voltage-Controlled Oscillators in III-V Nanowire Technology

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Xiangkun Yan; [2019]
    Keywords : Technology and Engineering;

    Abstract : .... READ MORE

  5. 19. The STM Study of Bi Adsorption on the InAs(111)B Surface

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Jung-Ching Liu; [2019]
    Keywords : bismuth; indium arsenide 111 B; adsorption; surface; scanning tunneling microscopy; Physics and Astronomy;

    Abstract : Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. READ MORE

  6. 20. Correlated Structure-Property Investigation of Ultrathin InAs Nanowires

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Linnea Suomenniemi; [2019]
    Keywords : Nanowires; InAs; epitaxy; MBE; Photo luminescence; Physics and Astronomy;

    Abstract : III-V semiconductors are a profound part of the optoelectronics industry and new developments in alloy compositions and architectures are constantly emerging. Lowdimensional semiconductors, such as nanowires (NWs) have shown to have improved characteristics in certain areas such as enhanced light absorption and can furthermore be integrated on Silicon (Si) plattforms and are thus predicted to be a key component in future nanoelectronic and nanophotonic applications and devices. READ MORE