Essays about: "iii-v"

Showing result 21 - 25 of 64 essays containing the word iii-v.

  1. 21. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Azal Alothmani; [2018]
    Keywords : Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

    Abstract : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. READ MORE

  3. 22. Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells

    University essay from Linköpings universitet/Halvledarmaterial

    Author : Hsin-Yu Chen; [2018]
    Keywords : selective area growth; MOCVD; AlGaN pyramid; GaN multiple quantum wells; undesired deposition;

    Abstract :   Since Shuji Nakamura, Hiroshi Amano, and Isamu Akasaki won the 2014 Nobel prize in Physics owing to theircontributions on the invention of efficient blue GaN light emitting diodes, GaN became an even more appealingmaterial system in the research field of optoelectronics. On the other hand, quantum structures or low-dimensionalstructures with properties derived from quantum physics demonstrate superior and unique electrical and opticalproperties, providing a significant potential on novel optoelectronic applications based on the employment of quantumconfinement. READ MORE

  4. 23. Development of III-V RF Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Josefine Rost; Anna Wagnström; [2018]
    Keywords : Nanowire MOSFET; RF; COMSOL Multiphysics; Semiconductor processing; III-V Materials; Technology and Engineering;

    Abstract : The silicon MOSFET is one of the most important components used in modern electronics. The pursuit to continue fulfilling Moore’s law by scaling transistors to even smaller sizes have driven the development forward for CMOS technologies and new approaches have been necessary. READ MORE

  5. 24. Design and Fabrication of 1550 nm Photonic Crystal Surface Emitting Lasers

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : João Martins de Pina; [2018]
    Keywords : Photonic crystal; surface-emitting laser; metal organic chemical vapour deposition; III-V semi- conductors; light emitting diode.;

    Abstract : In this study, the design and fabrication of a monolithic InP-based 1550-nm photonic-crystal surfaceemitting laser (PCSEL) is reported. The device is composed by an InGaAsP multi-quantum well (MQW) active layer and InP photonic crystal (PhC) formed by metal organic chemical vapour deposition (MOCVD). READ MORE

  6. 25. Spatial control of electron & hole states in InAs/GaSb heterostructures

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Felix Vennberg; [2018]
    Keywords : InAs; GaSb; Nanowires; ambipolar; heterostructures; III-V; Physics and Astronomy;

    Abstract : Single nanowire transistors employing three separately controlled electrostatic gates were fabricated to investigate band gap modulation in InAs-GaSb heterostructures. The aim is to show hybridization between electron and hole states over the heterojunction. READ MORE