Essays about: "iii-v"

Showing result 11 - 15 of 64 essays containing the word iii-v.

  1. 11. AlP sacrificial layer for GaP NW growth

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Patrick Flatt; [2020]
    Keywords : Nanowire; Substrate Reuse; Sacrificial Layer; Epitaxy; Wafer; MOVPE; Etching; GaP; AlP; SiN; Au; SEM; Physics and Astronomy;

    Abstract : III-V semiconductor nanowires (NWs) display outstanding potential for many technological applications, but their implementation into devices is restricted due to high material and fabrication costs. Common techniques for NW synthesis rely on single crystalline substrates, which are single-use and have large costs associated to them. READ MORE

  3. 12. III-V Nanowire MOSFETs for mm-Wave Switch Applications

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Marcus Sandberg; [2020]
    Keywords : III-V Nanowire MOSFET; millimeter wave mmW ; millimeter-wave integrated circuit MMIC ; single-pole double-throw SPDT ; Technology and Engineering;

    Abstract : RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. READ MORE

  4. 13. Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy

    University essay from KTH/Tillämpad fysik

    Author : Lakshman Srinivasan; [2020]
    Keywords : GaAsP; ELOG; HVPE; Photoluminescence; Raman;

    Abstract : Direct heteroepitaxy of III-Vs on silicon (Si) has always been a challenge and there are various strategies to integrate these materials. This thesis deals with one such strategy known as Epitaxial lateral overgrowth (ELOG) which is extensively supported by experiments. READ MORE

  5. 14. An STM-based study of Bi deposition on InAs(110)

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Tobias Alpskog; [2020]
    Keywords : Bismuth; Deposition; STM; Physics and Astronomy;

    Abstract : III-V semiconductor compounds containing Bi, such as InBi, have recently attracted much attention due to predictions of band inversion and topological insulators. The predictions showed that films of InBi could be applicable in quantum computers and at room temperature. READ MORE

  6. 15. Properties of III-V/Si heterojunction fabricated by HVPE

    University essay from KTH/Tillämpad fysik

    Author : Prakhar Bhargava; [2020]
    Keywords : ;

    Abstract : Silicon is a promising material and is used for a wide range of applications in the electronics industry because of the high quality surface passivation given by the native oxide layer SiO2e. However, Si is not an ideal candidate for optoelectronic applications due to its indirect bandgap of 1. READ MORE