Essays about: "iii-v"

Showing result 6 - 10 of 64 essays containing the word iii-v.

  1. 6. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Shengpeng Huang; [2023]
    Keywords : indium antimonide; surface reconstructions; bismuth deposition; scanning tunneling microscopy; X-ray photoelectron spectroscopy.; Physics and Astronomy;

    Abstract : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. READ MORE

  3. 7. III-V semiconductor waveguides for application in nonlinear optics.

    University essay from KTH/Tillämpad fysik

    Author : Andreas Charalampous; [2022]
    Keywords : InGaP; optical waveguides; integrated optics; quantum nonlinear optics; SHG; SPDC; InGaP; optiska vågledare; integrerad optik; icke-linjär kvantoptik; SHG; SPDC;

    Abstract : This thesis presents studies on III-V semiconductor waveguides with particular emphasis on second-order optical nonlinearity. The nonlinear processes that were investigated in this thesis are the Second Harmonic Generation (SHG) and the Spontaneous Parametric Down-Conversion (SPDC). READ MORE

  4. 8. Laminated HZO on InAs: A study of as-deposited ferroelectricity

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : André Andersen; [2022]
    Keywords : Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

    Abstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE

  5. 9. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Sofie Johannesson; Sebastian Skog; [2022]
    Keywords : Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

    Abstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE

  6. 10. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Rungeng Xu; [2022]
    Keywords : E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Abstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE