Essays about: "Nanoelectronics"
Showing result 1 - 5 of 13 essays containing the word Nanoelectronics.
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1. Ion Induced Particle Desorption From Self Supporting Nanomembranes : Influence of Different Geometries and Particle Types
University essay from Uppsala universitet/Tillämpad kärnfysikAbstract : Nanoelectronics is a field undergoing rapid development, meaning knowledge of the materials and methods used in nano-scale systems is a driving force in the industry. Silicon is a well known material in nanoelectronics commonly used as a semiconductor and is therefore a good representative for nanomaterials in general. READ MORE
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2. Laminated HZO on InAs: A study of as-deposited ferroelectricity
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE
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3. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE
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4. AI Trained to Predict Thresholds of 2D Ellipse Percolation Systems
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Percolation theory is a relevant area of research in Nanotechnology because of its wide applications in nanoelectronics based on thin films of nanoparticles and composites, amongst others. In nanotechnology, systems are often explored through modelling and simulations. READ MORE
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5. Investigation of Resistive Random Access Memory for 1T1R Nanowire Array Integration
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : As modern electronics have started to reach its physical scaling limits, novel architectures and physics is needed to meet future demands. Oxide-based Resistive Random Access Memory (RRAM) is a new emerging technology that uses filament formation and rupture in thin oxides to generate resistive switching. READ MORE