Advanced search

Found 1 essay matching the above criteria.

1. 1. Characterization of SiGe layers grown by Trisilane and Germane at low temperatures for BiCMOS application

   University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

   Author : Carmine Cappetta; [2014]
   Keywords : ;

   Abstract : Low temperature epitaxy (LTE) of SiGe by chemical vapor deposition (CVD) has attracted dramatic attention during the last decade for CMOS and BiCMOS application. LTE relates to a temperature range of 350÷650 °C. READ MORE