Essays about: "oxide growth"
Showing result 16 - 20 of 66 essays containing the words oxide growth.
-
16. Thermal Stability of Titanium and Niobium Stabilized Stainless Steel
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : This master thesis examined the microstructure after heat treatments in stainless steel, two conventional stainless steel (304 and 316) and two novel high temperature stainless steel. These stainless steels are for the use in high temperature heat exchangers for extended temperature range. READ MORE
-
17. Synthesis of single-layer graphene and studying oxidation behaviour of copper foil.
University essay from Umeå universitet/Institutionen för fysikAbstract : The ultimate aim of the current study is to investigate the electron transfer from copper (Cu) to single layer graphene through a thin Cu oxide layer. Therefore the project is divided into two main parts. READ MORE
-
18. Corrosion studies on multicomponent TiZrNbTa thin films
University essay from Uppsala universitet/StrukturkemiAbstract : The goal of this work was to evaluate the electrochemical properties of TiZrNbTa thin films deposited by magnetron sputtering using an industrial physical vapor deposition system. Samples were deposited on both Si(001) and 316L stainless steel. READ MORE
-
19. Growth and Characterization of Ferroelectric Lanthanum-Doped Hafnia
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : Hafnia-based ferroelectrics show great promise as future nonvolatile memory devices, however, their issues regarding device inconsistency across their lifetime, coupled with the relatively short total lifetime, makes these devices only theoretical as of now. In this thesis, an ALD deposition recipe for lanthanum oxide deposition was created. READ MORE
-
20. Properties of III-V/Si heterojunction fabricated by HVPE
University essay from KTH/Tillämpad fysikAbstract : Silicon is a promising material and is used for a wide range of applications in the electronics industry because of the high quality surface passivation given by the native oxide layer SiO2e. However, Si is not an ideal candidate for optoelectronic applications due to its indirect bandgap of 1. READ MORE