Structural and optical characterization of Si/Ge quantum dots

Abstract: In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production. The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures. As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.