Epitaxial growth of Sn seeds and Sn-seeded InSb nanowires on InSb substrates

Abstract: During the last decades, researchers have done extensive research on one-dimensional structures because of their promising properties for a broad range of applications. However, there are a few factors slowing down the process of integrating these nanowires in commercial products. To overcome this, new material combinations are being explored. This thesis focuses on the investigation of in situ MOVPE formation of tin seeds on indium antimony substrates for growth of indium antimonide nanowires. The effects of varying growth conditions such as growth temperature, growth time and tin source flow have been studied along with attempts to grow Sn-seeded InSb nanowires. From the Sn particle experiments, the possibility to control the particle diameter and density on InSb(111)A-type substrate was shown by varying the growth conditions. Successful Sn-seeded InSb nanowires were grown with two different morphologies; triangular and hexagonal base morphologies.