The influence of growth temperature on CVD grown graphene on SiC

Abstract: Graphene is one of the most popular material due to its promising properties, for instance electronics applications. Graphene films were grown on silicon carbide (SiC) substrate using chemical vapor deposition (CVD). Influence of the deposition temperature on the morphology of the films was investigated. Characterizations were done by reflectance mapping, atomic force microscopy and Raman spectroscopy. Two samples were done by sublimation process, to compare the number of layers and the morphology of the graphene films with the one grown by chemical vapor deposition.The reflectance mapping showed that the number of layers on the samples made by CVD was notinfluenced by the deposition temperature. But also, demonstrated that sublimation growth is present in allthe samples due to the presence of silicon coating in the susceptor. The growth probably started by sublimation and then CVD deposition. The step morphology characteristic of the silicon carbide substrate surface was conserved during the deposition of graphene. But due to surface step bunching, a decrease inthe step height occurred and the width of the terraces increased. The decreasing in deposition temperature leads to a smoother surface with the CVD method. Raman spectroscopy confirmed the presence ofgraphene and of the buffer layer characteristic of the sublimation growth. Moreover, it demonstrated the presence of compressive strain in the graphene layers.