Essays about: "MOVPE"

Showing result 6 - 10 of 16 essays containing the word MOVPE.

1. 6. Realization of quantum dots emitting at 1.55µm for single photon emitters

   University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

   Author : Rafaelle Gallo; [2017]
   Keywords : ;

   Abstract : This thesis reports is about the fabrication and characterization of InAs self-assembled quantum dots (QDs) using both InP and GaAs substrates for the realization of telecommunication-wavelength single-photon sources for quantum communication. The QDs were grown by metal organic vapour phase epitaxy (MOVPE) using the strain-driven Stranski-Krastanov formation mechanism. READ MORE

3. 7. Simulation and analysis of InP/GaInP nanowire Esaki diodes for photovoltaic device applications

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Odd Restad; [2017]
   Keywords : Physics and Astronomy; Technology and Engineering;

   Abstract : In this thesis the WKB-approximation is used to simulate the tunneling current for an Esaki nanowire diode and the result is compared to data from Esaki nanowire diodes grown with MOVPE. The WKB-approximation with triangular potential barrier predicts a strong increase of the tunneling current as a function of the doping densities and at the highest doping levels it gives lower tunneling distances than more reliable drift-diffusion simulations and is thus overestimating the current. READ MORE

4. 8. Electrical characterization of strained InP-Ga(x)In(1-x)As core-shell nanowires

   University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Author : Lorenz Frevel; [2016]
   Keywords : nanowire; strain; piezoelectric effect; indium phosphide; InP; gallium indium arsenide; GaInAs; InGaAs; core-shell; radial heterostructure; Physics and Astronomy;

   Abstract : This project report attempts to measure the piezoelectric effect in strained core-shell nanowires. The core material is wurtzite indium phosphide (InP) and the shell material wurtzite gallium indium arsenide (Ga(x)In(1-x)As). READ MORE

5. 9. Development of Contacts for Vertical GaSb Nanowires using Transmission Line Measurements

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Denis Nadein; [2016]
   Keywords : III-V; GaSb; Nanowires; Processing; Characterization; TLM; Technology and Engineering;

   Abstract : A processing method is developed to characterize contacts for vertical nanowire structures. The process is based around optical lithography and an organic spacer material in order to facilitate an easily repeatable processing flow. Substrates with MOVPE grown GaSb nanowires are processed into sets of resistor devices. READ MORE

6. 10. Development of Epitaxial Lift-Off to form GaAs nanowire array membranes

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Erik Svensson; [2016]
   Keywords : MOVPE; MOCVD; AlGaAs; 111 B; Epitaxy; ELO; Epitaxial Lift-Off; Technology and Engineering;

   Abstract : Epitaxial lift-off-layers (ELO) were developed in order to create nanowire array membranes, with the intent to pave the way for solar cells in tandem. Ultimately this thesis project focused only on growing and characterizing the ELO layers on (111)B oriented GaAs substrates with MOCVD, as this process step is not thoroughly understood in literature. READ MORE