Essays about: "gallium indium arsenide"

Showing result 1 - 5 of 10 essays containing the words gallium indium arsenide.

1. 1. Nanowire based mm-wave LNA and switch design

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Andreas Grenmyr; [2020]
   Keywords : LNA mm-wave RF switch nanowire MOSFET; Technology and Engineering;

   Abstract : In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. READ MORE

3. 2. Polymer Assisted Transfer of Graphene onto Semiconductor Substrates

   University essay from Lunds universitet/Förbränningsfysik; Lunds universitet/Synkrotronljusfysik

   Author : Jonathan Frisby; [2020]
   Keywords : Physics and Astronomy;

   Abstract : Since first being isolated in 2004, Graphene has been researched heavily because of its unique properties. Recently, interest has grown in graphene/semiconductor heterostructures. In this work, the transfer of graphene through the use of cellulose acetate butyrate (CAB) polymer is studied. READ MORE

4. 3. I-V and Optical Characterization of InP/InAsP Quantum Disc-in-Nanowire Infrared Photodetectors

   University essay from Högskolan i Halmstad/Akademin för informationsteknologi

   Author : Divya Raval; [2019]
   Keywords : Nanowires; Infrared photodetectors; Quantum disc; Photocurrent;

   Abstract : Photodetectors are semiconductor devices capable of converting optical signals into electrical signals. There is a wide range of applications for photodetectors such as fiber optics communication, infrared heat camera sensors, as well as in medical and military equipment. READ MORE

5. 4. Using gallium nitride nanowires as STM probes

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Karolis Sulinskas; [2018]
   Keywords : STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

   Abstract : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. READ MORE

6. 5. Electrical characterization of strained InP-Ga(x)In(1-x)As core-shell nanowires

   University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Author : Lorenz Frevel; [2016]
   Keywords : nanowire; strain; piezoelectric effect; indium phosphide; InP; gallium indium arsenide; GaInAs; InGaAs; core-shell; radial heterostructure; Physics and Astronomy;

   Abstract : This project report attempts to measure the piezoelectric effect in strained core-shell nanowires. The core material is wurtzite indium phosphide (InP) and the shell material wurtzite gallium indium arsenide (Ga(x)In(1-x)As). READ MORE