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Showing result 21 - 25 of 70 essays matching the above criteria.

1. 21. Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy

   University essay from KTH/Tillämpad fysik

   Author : Lakshman Srinivasan; [2020]
   Keywords : GaAsP; ELOG; HVPE; Photoluminescence; Raman;

   Abstract : Direct heteroepitaxy of III-Vs on silicon (Si) has always been a challenge and there are various strategies to integrate these materials. This thesis deals with one such strategy known as Epitaxial lateral overgrowth (ELOG) which is extensively supported by experiments. READ MORE

3. 22. Properties of III-V/Si heterojunction fabricated by HVPE

   University essay from KTH/Tillämpad fysik

   Author : Prakhar Bhargava; [2020]
   Keywords : ;

   Abstract : Silicon is a promising material and is used for a wide range of applications in the electronics industry because of the high quality surface passivation given by the native oxide layer SiO2e. However, Si is not an ideal candidate for optoelectronic applications due to its indirect bandgap of 1. READ MORE

4. 23. Optical studies of wrapgated InP nanowires

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Henrik Torstensson; [2019]
   Keywords : Nanowire; InP; ITO; wrapgate; photoluminescence; interface states.; Physics and Astronomy;

   Abstract : This thesis describes optical spectroscopy on III-V semiconductor InP nanowires (NW) with a transparent indium-tin-oxide (ITO) gate electrode. The NWs are arranged both as vertical arrays with a wrap all around gate and as single lateral NWs with an omega-shaped gate for increased electrostatic effect. READ MORE

5. 24. Passivation of Gallium Arsenide Nanowires for Solar Cells

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Austin Irish; [2019]
   Keywords : nanowires; semiconductors; solar cells; photovoltaics; passivation; electronics; chemistry; polymers; hydrazine; plasma; gallium; arsenic; iii-v; epitaxy; photoluminescence; time-resolved; spectroscopy; Physics and Astronomy;

   Abstract : A strategic and diverse set of passivation methods for gallium arsenide nanowires wasstudied. Using a time-resolved photoluminescence setup at100 Kand300 K, the radiativerecombination of charge carriers was resolved on a picosecond time scale. READ MORE

6. 25. Correlated Structure-Property Investigation of Ultrathin InAs Nanowires

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Linnea Suomenniemi; [2019]
   Keywords : Nanowires; InAs; epitaxy; MBE; Photo luminescence; Physics and Astronomy;

   Abstract : III-V semiconductors are a profound part of the optoelectronics industry and new developments in alloy compositions and architectures are constantly emerging. Lowdimensional semiconductors, such as nanowires (NWs) have shown to have improved characteristics in certain areas such as enhanced light absorption and can furthermore be integrated on Silicon (Si) plattforms and are thus predicted to be a key component in future nanoelectronic and nanophotonic applications and devices. READ MORE