Essays about: "SiC MOSFETs"

Showing result 6 - 10 of 12 essays containing the words SiC MOSFETs.

  1. 6. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Rishi Balasubramanian Saraswathy; [2022]
    Keywords : Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

    Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE

  3. 7. Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs

    University essay from Mittuniversitetet/Institutionen för elektronikkonstruktion

    Author : Farhan Akram; [2021]
    Keywords : SiC MOSFETs; Gate drivers; DC-DC converter; High power and efficiency power supplies;

    Abstract : Discrete silicon carbide (SiC) power devices have unique characteristics that outpace those of silicon (Si) counterparts. The improved physical features have provided better faster switching, greater current densities, lower on-resistance, and temperature performances. READ MORE

  4. 8. Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Sotirios Maslougkas; [2021]
    Keywords : Silicon carbide; Gate oxide; Oxide characterization; MOS devices; Semiconductor- insulator interface; Kiselkarbid; Gate-oxid; Oxidkarakterisering; MOS-teknologi; halvledar-isolatorgränssnitt;

    Abstract : Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. READ MORE

  5. 9. SiC MOSFET function in DC-DC converter

    University essay from Uppsala universitet/Elektricitetslära

    Author : Christian Al Kzair; [2020]
    Keywords : SiC; Buck converter; Buck; Silicon carbide; ROHM;

    Abstract : This thesis evaluate the state of art ROHM SCT3080KR silicon carbide mosfet in a synchronous buck converter. The converter was using the ROHM P02SCT3040KR-EVK-001 evaluation board for driving the mosfets in a half bridge configuration. READ MORE

  6. 10. State-of-the-art DC Current Interruption Concept using SiCMOSFETs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Georgios Papadopoulos; [2019]
    Keywords : ;

    Abstract : The transportation is in transition to the electrification era where the main source of energy for thevehicles is supplied by high energy propulsion batteries with voltages above 400 V. Currently the majority of the batteries are lithium-ion batteries and it is crucial to protect them from shortcircuits in order to ensure the safe operation in case of a vehicle crash or misuse of the vehicle. READ MORE