Essays about: "Gate oxide"
Showing result 1 - 5 of 30 essays containing the words Gate oxide.
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1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE
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2. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE
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3. Assessing Sweden's future prospect for domestic hydrogen production based on lifecycle assessment
University essay from KTH/Hållbar utveckling, miljövetenskap och teknikAbstract : Humanity faces challenge to satisfy its growing energy demand while simultaneously transitioning into a sustainable society. Reducing carbon emissions from the industrial and transportation sector are met with difficulties. To help decarbonisation efforts EU members like Sweden have recognised the use of hydrogen as a viable solution. READ MORE
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4. Fabrication and Characterization of Quantum-well Field Effect Transistor
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. READ MORE
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5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE
