Essays about: "Semiconductor- insulator interface"

Found 3 essays containing the words Semiconductor- insulator interface.

1. 1. Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Sotirios Maslougkas; [2021]
   Keywords : Silicon carbide; Gate oxide; Oxide characterization; MOS devices; Semiconductor- insulator interface; Kiselkarbid; Gate-oxid; Oxidkarakterisering; MOS-teknologi; halvledar-isolatorgränssnitt;

   Abstract : Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. READ MORE

3. 2. Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Lun Sang; [2018]
   Keywords : ferroelectricity; Hf0.5Zr0.5O2; GIXRD; XRR; Technology and Engineering; Physics and Astronomy;

   Abstract : Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. READ MORE

4. 3. InAs and high-k oxides, a scanning tunnelling study of their interfaces

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Mattias Åstrand; [2018]
   Keywords : Semiconductor; High-k; Atomic layer deposition; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy; Physics and Astronomy;

   Abstract : In order for semiconductor materials to be suitable for implementation in new and progressive devices they have to be of better electronic characteristics than currently used materials, and maintain these once treated and put into action. It is important to verify that bulk characteristics are not hindered at the surface when a given semiconductor is put in contact with another material due to necessity. READ MORE