Essays about: "MOS-teknologi"

Found 2 essays containing the word MOS-teknologi.

  1. 1. Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Sotirios Maslougkas; [2021]
    Keywords : Silicon carbide; Gate oxide; Oxide characterization; MOS devices; Semiconductor- insulator interface; Kiselkarbid; Gate-oxid; Oxidkarakterisering; MOS-teknologi; halvledar-isolatorgränssnitt;

    Abstract : Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. READ MORE

  2. 2. Fabrication and electrical characterization of Ge/GeOx/Al2O3/HfO2 MOS capacitors

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Laura Zurauskaite; [2016]
    Keywords : ;

    Abstract : Continuous scaling of complementary metal oxide semiconductor (CMOS) devices has led to constant increase in device performance. However, as scaling becomes more difficult with every technological node, alternative channel materials that could replace silicon (Si) are being investigated [1]. READ MORE