Essays about: "silicon characterization"

Showing result 1 - 5 of 69 essays containing the words silicon characterization.

  1. 1. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Elochukwu Mbah; [2023]
    Keywords : Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE

  3. 2. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

    University essay from KTH/Tillämpad fysik

    Author : Elaheh Aghajafari; [2023]
    Keywords : III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

    Abstract : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. READ MORE

  4. 3. Optical Emission Spectroscopy Pulse Distribution Analysis on Steel Production Samples : Accuracy, sample variation, spread in different samples and steel grades/routes

    University essay from KTH/Materialvetenskap

    Author : Paulo Urrea Molina; [2023]
    Keywords : ;

    Abstract : This thesis work aimed to contribute to the development of online characterization techniques for non-metallic inclusions in steelmaking. The study focused on assessing the precision and accuracy of the optical emission spectroscopy pulse distribution analysis (OES/PDA) technique using asreference light optical microscope (LOM) and scanning electron microscope(SEM). READ MORE

  5. 4. Improving polarizing neutron optics by introducing 11B4C as interlayers

    University essay from Linköpings universitet/Tunnfilmsfysik

    Author : Martin Falk; [2023]
    Keywords : Thin film multilayers; Neutron optics; Neutron polarization;

    Abstract : In this report, the effects of adding 11B4C as interlayers into Fe/Si multilayers is studied. Fe/Si multilayers are commonly used for neutron polarization at large research facilities, and improving the polarizing properties would improve their efficiency. READ MORE

  6. 5. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Shengpeng Huang; [2023]
    Keywords : indium antimonide; surface reconstructions; bismuth deposition; scanning tunneling microscopy; X-ray photoelectron spectroscopy.; Physics and Astronomy;

    Abstract : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. READ MORE