Essays about: "Silicon Carbide Power MOSFET"
Showing result 1 - 5 of 8 essays containing the words Silicon Carbide Power MOSFET.
-
1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE
-
2. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE
-
3. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. READ MORE
-
4. Efficiency Comparison between Two-Level and T-Type Inverter for 800 V Automotive Application
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : The falling cost of batteries, along with an increasing need to cut emissions, has spurred significant interest in the electrification of vehicles. In addition, as semiconductor devices have evolved, the research for electric vehicles with higher battery voltage has increased. READ MORE
-
5. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE
