Essays about: "III-V Materials"
Showing result 1 - 5 of 32 essays containing the words III-V Materials.
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1. In-Situ Investigation of Particle Assisted GaSb Nucleation Using Environmental TEM
University essay from Lunds universitet/Centrum för analys och syntesAbstract : III-V semiconductor material based nanowires have been extensively studied and shown to be a very exciting building block for future electronics. Material systems such as GaSb show a lot of promise in optoelectric and thermoelectric generation applications because of its high electron mobility and small bandgap. READ MORE
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2. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell
University essay from KTH/Tillämpad fysikAbstract : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. READ MORE
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3. In-situ Growth of Sn-seeded GaAs and GaSb Nanowire Heterostructures
University essay from Lunds universitet/Centrum för analys och syntesAbstract : One of the ways to utilize III-V nanowires, is to make use of the possibility to combine materials and create heterostructures which allows for creating material combinations with new properties. A special interest can be taken into Sb-containing nanowires due to the high electron mobility, however there has been reported difficulties with switching to other materials because of a 'memory effect' where Sb lingers in the system and nanowire. READ MORE
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4. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. READ MORE
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5. Laminated HZO on InAs: A study of as-deposited ferroelectricity
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE
