Essays about: "MOSFET"

Showing result 11 - 15 of 50 essays containing the word MOSFET.

  1. 11. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Patrik Blomberg; Ludvig Pile; [2022]
    Keywords : D-band; Power Amplifier; Pseudo-differential common source; Stacked; Vertical InGaAs nanowire; MOSFET; Technology and Engineering;

    Abstract : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. READ MORE

  3. 12. Efficiency Comparison between Two-Level and T-Type Inverter for 800 V Automotive Application

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Rishabh Jain; [2022]
    Keywords : Electric Vehicles; Efficiency Comparison; Loss Calculation; SiC MOSFET; T-Type Inverter; Three-level Inverter; Two-level Inverter; Inverter i två nivåer; inverter av T-typ; inverter i tre nivåer; SiC MOSFET; förlustberäkning; verkningsgradsjämförelse; elfordon;

    Abstract : The falling cost of batteries, along with an increasing need to cut emissions, has spurred significant interest in the electrification of vehicles. In addition, as semiconductor devices have evolved, the research for electric vehicles with higher battery voltage has increased. READ MORE

  4. 13. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Rishi Balasubramanian Saraswathy; [2022]
    Keywords : Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

    Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE

  5. 14. Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs

    University essay from Mittuniversitetet/Institutionen för elektronikkonstruktion

    Author : Farhan Akram; [2021]
    Keywords : SiC MOSFETs; Gate drivers; DC-DC converter; High power and efficiency power supplies;

    Abstract : Discrete silicon carbide (SiC) power devices have unique characteristics that outpace those of silicon (Si) counterparts. The improved physical features have provided better faster switching, greater current densities, lower on-resistance, and temperature performances. READ MORE

  6. 15. Optimization and Up-Gradation of 3-Phase Half-Bridge Inverter Board

    University essay from Linköpings universitet/Elektroniska Kretsar och System

    Author : Vatsal Sonikbhai Shah; [2021]
    Keywords : Inverter; Half Bridge; PCB; AC; Power Electronics; SiC; Power MOSFET; Gate Drive; Snubbers; Bootstrap; Ringing; DC to AC; Power Conversion;

    Abstract : Solar Bora AB is a Linköping based company that provides end to end solution for clean and reliable energy. System developed by them generates high power 230V AC to run electrical appliances. READ MORE