Essays about: "quantum confined stark effect"

Found 3 essays containing the words quantum confined stark effect.

  1. 1. Fabrication and characterisation of RGB LEDs based on nanowire technology

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Patrik Olausson; [2019]
    Keywords : RGB LEDs; InGaN; GaN; nitrides; platelets; nanotechnology; Technology and Engineering;

    Abstract : The white light LEDs of today are usually based on a blue LED and a phosphor, converting the blue light to longer wavelengths. While these phosphor-converted LEDs are extremely efficient compared to incandescent light or fluorescent light, there is still plenty of room for improvement. READ MORE

  2. 2. Improving green LEDs: A meta study into the causes and remedies of the green gap

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Andreas Malmgren; [2015]
    Keywords : Light emitting diodes; quantum wells; recombination rate; Technology and Engineering; Physics and Astronomy;

    Abstract : This literature review investigates and evaluates different strategies to improve InGaN-based light emitting diodes (LED) by analyzing published theoretical and experimental studies. The issues of non-uniform carrier distribution, piezoelectric polarization fields and poor wave function overlap can be mitigated by the use of InGaN barriers and substrates as well as staircase designs for quantum wells (QW). READ MORE

  3. 3. Carrier Dynamics in InGaN/GaN Semipolar and Nonpolar Quantum Wells

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Sherif Mohamed; [2013]
    Keywords : InGaN; piezoelectric fields; quantum confined stark effect; semipolar planes; nonpolar planes; photoluminescence; carrier dynamics; carrier localization and polarized emission.;

    Abstract : InGaN based light emitting devices operating in the blue and near UV spectral regions are commercialized and used in many applications. InGaN heterostructures experience compositional inhomogeneity and thus potential fluctuations, such that regions of higher indium composition are formed and correspond to lower potentials. READ MORE