Essays about: "random access memory"

Showing result 11 - 15 of 33 essays containing the words random access memory.

  1. 11. HfO2 and ITO Resistive Random-Access Memory

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Mattias Åstrand; [2020]
    Keywords : RRAM; Resistive switching; HfO2; ITO; Physics and Astronomy;

    Abstract : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantifies performance according to standard figures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. READ MORE

  3. 12. Investigation of Hybrid Simulation Methods for Evaluation of EMF Exposure in Close Proximity of 5G Millimeter-Wave Base Stations

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : David Anguiano Sanjurjo; [2020]
    Keywords : 5G; base station; EMF exposure; hybrid simulation method; millimeter wave;

    Abstract : With the emergence of Fifth Generation (5G) mobile networks, the employment ofhigher frequencies in the millimeter-wave (mmWave) range and the realization of agreat number of beams in 5G radio base stations (RBS) make the electromagnetic (EM)simulation of RBS products very costly in terms of hardware and time requirements.In order to compute the electromagnetic field (EMF) exposure in close proximity of theRBS, more efficient simulation methods are required. READ MORE

  4. 13. Building Datagram Transport Layer Security (DTLS)-based access control in the Internet-of-Things

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Chenxi Feng; [2020]
    Keywords : ;

    Abstract : With the widespread use of the Internet of Things (IoT), the security problem has raised social attention. Due to the limited calculation ability of the constrained device, it is difficult to download the defense software inside and the device just can use the built-in encryption mechanisms to defend attack. READ MORE

  5. 14. Growth and Characterization of Ferroelectric Lanthanum-Doped Hafnia

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Harald Havir; [2020]
    Keywords : Ferroelectricity; Lanthanum-doped Hafnia; ALD; Science General;

    Abstract : Hafnia-based ferroelectrics show great promise as future nonvolatile memory devices, however, their issues regarding device inconsistency across their lifetime, coupled with the relatively short total lifetime, makes these devices only theoretical as of now. In this thesis, an ALD deposition recipe for lanthanum oxide deposition was created. READ MORE

  6. 15. Design and Simulation of Terahertz Antenna for Spintronic Applications

    University essay from Uppsala universitet/Institutionen för materialvetenskap

    Author : Nils Eivarsson; Malin Bohman; Emil Grosfilley; Axel Lundberg; [2020]
    Keywords : spintronics; terahertz; THz; antenna; simulation; COMSOL multiphysics;

    Abstract : Spintronics is a spin-electronic field where the electron spinangular momentum, in conjunction with charge, is used to read andwrite information in magnetic sensors and logic circuits, e.g. hard disk drive (HDD), magnetic random access memory (MRAM) and broadband TeraHertz (THz) emitters. READ MORE