Essays about: "random access memory"

Showing result 6 - 10 of 33 essays containing the words random access memory.

1. 6. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Limitha Subbaiah Kumar Nangaru; [2022]
   Keywords : CMOS Complementary Metal Oxide Semiconductors ; DRC Design Rule Check ; Process Corners; FinFET Fin Field Effect Transistor ; IC Integrated Circuit ; LVS Layout Versus Schematic ; Monte Carlo; Nominal Voltage; PDK Process Design Kit ; Power Delay Product; Read Bit Line; Read Word Line; SoC System on Chip ; SRAM Static Random Access Memory ; Threshold Voltage; Technology and Engineering;

   Abstract : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. READ MORE

3. 7. A Study on Data-driven Methods for Selection and Evaluation of Beam Subsets in 5G NR

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Nic Ekman; Ilias Theodoros Skordas; [2022]
   Keywords : 5G; NR; telecom; telecommunications; ML; machine learning; algorithms; beam; widebeam; propagation; beamforming; subset; RAN; radio; radio environment; ericsson; Technology and Engineering;

   Abstract : 5G New Radio is the next generation of mobile networks and it comes with promises of ultra-high speeds, ultra-high reliability and ultra-low latency. This has posed a challenge for the engineers entrusted with the task of finding solutions which could fulfil the specification, and as a result, some promising areas have received increased attention in recent years. READ MORE

4. 8. Study of the Resistive Switching Mechanism in Novel Ultra-thin Organic-inorganic Dielectric-based RRAM through Electrical Observations

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Alba Maria Martinez Garcia; [2021]
   Keywords : Resistive random-access memory RRAM ; flexible electronics; organic-inorganic hybrid dielectric; dual-mode conducting filament; electrical programming; Resistivt slumpmässigt åtkomstminne RRAM ; flexibel elektronik; organisk-oorganisk hybrid dielektrikum; dubbelt läge ledande glödtråd; elektrisk programmering;

   Abstract : The promising role resistive random-access memory (RRAM) plays in the imminent reality of wearable electronics calls for a new, updated physical model of their operating mechanism. Their high applicability as the next-generation flexible non-volatile memory (NVM) devices has promoted the recent emergence of a novel ultra-thin (< 5nm) organic/inorganic hybrid dielectric RRAM. READ MORE

5. 9. A Study on Efficient Memory Utilization in Machine Learning and Memory Intensive Systems

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Jones Emmanuel; [2021]
   Keywords : Memory; Machine Learning; Hardware accelerator; Power; PULPissimo; Technology and Engineering;

   Abstract : As neural networks find more and more practical applications targeted for edge devices, the implementation of energy-efficient architectures is becoming very crucial. Despite the advancements in process technology, power and performance of memories remain to be a bottleneck for most computing platforms. READ MORE

6. 10. Investigation of Resistive Random Access Memory for 1T1R Nanowire Array Integration

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Orestes Theodoridis; [2020]
   Keywords : RRAM; Nanowire; Memory Technology; Nanoelectronics; Nanoscience; Physics and Astronomy;

   Abstract : As modern electronics have started to reach its physical scaling limits, novel architectures and physics is needed to meet future demands. Oxide-based Resistive Random Access Memory (RRAM) is a new emerging technology that uses filament formation and rupture in thin oxides to generate resistive switching. READ MORE