Essays about: "tröskelspänning"

Found 5 essays containing the word tröskelspänning.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Ivan Krsic; [2023]
    Keywords : HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE

  2. 2. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Agnimitra Saha; [2023]
    Keywords : Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE

  3. 3. A Simulation Study of Variability in Gate-all-Around Nanosheet Transistors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Virinchi Tirumaladass; [2022]
    Keywords : Gate-all-around; Nanosheet field effect transistors; process variations; variability; TCAD; Gate-all-around; Nanoblad fälteffekttransistorer; processvariationer; variabilitet; TCAD;

    Abstract : Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short channel effects (SCEs) due to their superior control over the channel and their large effective channel width. READ MORE

  4. 4. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Hithiksha Krishna Murthy; [2022]
    Keywords : Gallium nitrate; High Mobility Electron Transistor; Silicon carbide; Silicon; Sapphire; substrates; power electronics;

    Abstract : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. READ MORE

  5. 5. Work function engineering for high temperature FD-SOI transistors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Chenxi Wang; [2021]
    Keywords : ;

    Abstract : Various applications require the MOSFETs that work at a high temperature which is ambient operating temperature higher than 125 ℃. However, the traditional bulk MOSFETs at high temperature suffers from high leakage currents and threshold voltage shift, thus the performance of the bulk MOSFETs is severely degraded. READ MORE