Essays about: "parasitic channel"

Showing result 1 - 5 of 7 essays containing the words parasitic channel.

1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Ivan Krsic; [2023]
   Keywords : HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

   Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE

3. 2. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Hanyu Liu; Xi Chen; [2023]
   Keywords : nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Abstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE

4. 3. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Azal Alothmani; [2018]
   Keywords : Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

   Abstract : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. READ MORE

5. 4. RBC deformability fractionation and hydrodynamic trapping for studying Plasmodium Falciparum infection

   University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Author : Oskar Ström; [2017]
   Keywords : Red blood cells; RBCs; Plasmodium falciparum; hydrodynamic trapping; DLD; deterministic lateral displacement; deformability; Physics and Astronomy;

   Abstract : There have been several studies which indicate a preferential invasion towards younger red blood cells (RBCs) for the malarial parasite, P. Falciparum. Knowledge about a preferential mechanism could aid in the development of novel anti-malarial drugs. READ MORE

6. 5. High Performance Reference Crystal Oscillator for 5G mmW Communications

   University essay from Linköpings universitet/Elektroniska komponenter; Linköpings universitet/Tekniska högskolan

   Author : Tahmineh Torabian Esfahani; Stefanos Stefanidis; [2014]
   Keywords : Crystal Oscillator; 5G; mmW Communications; Oscillator Desing;

   Abstract : Future wireless communications (often referred to as 5G) are expected to operate at much higher frequencies compared to today’s wireless systems. During this thesis, we have investigated the option to use high frequency crystal oscillators, which along with a PLL, will generate the RF LO signal in the mmW range. READ MORE