Essays about: "On-state Resistance"

Showing result 1 - 5 of 6 essays containing the words On-state Resistance.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Ivan Krsic; [2023]
    Keywords : HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE

  3. 2. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Agnimitra Saha; [2023]
    Keywords : Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE

  4. 3. Fabrication and Characterization of Quantum-well Field Effect Transistor

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Yang Fu; [2022]
    Keywords : quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

    Abstract : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. READ MORE

  5. 4. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Rishi Balasubramanian Saraswathy; [2022]
    Keywords : Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

    Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE

  6. 5. The foreign policy of the Islamic Republic of Iran at 40. A discourse analyis

    University essay from Malmö universitet/Fakulteten för kultur och samhälle (KS)

    Author : Siavosh Bigonah; [2019]
    Keywords : Islamic Republic of Iran; discourse analysis; foreign policy; dialogue; security networking; peace; resistance;

    Abstract : Detta examensarbete utgår från det outredda faktum att den Islamiska republiken Iran (IRI) har kunnat driva fram sin agenda för självständighet och suveränitet från imperialistiskt och kolonialt ärvda dominansstrukturer. Denna agenda som är baserad på en militant diskurs om motstånd och fred har möjliggjort för IRI att exponentiellt vinna regionalt och internationellt inflytande trots sin brist på militär och ekonomisk hård makt. READ MORE