Essays about: "cause and effect of technology"
Showing result 1 - 5 of 347 essays containing the words cause and effect of technology.
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1. Exploring the effects of pressure on the magnetic properties of quasi-low dimensional quantum magnets via thermodynamic measurements
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : Four model solid state compounds were used to experimentally investigate the effects of pressure on the interactions in one- and two-dimensional Heisenberg magnetic models. BaCuSi2O6, BaCu2V2O8, SrCuO2 and CuGeO3 were successfully synthesized via solid-state reactions and characterized via x-ray diffraction. READ MORE
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2. Prospects for a Free Electron Laser at the FemtoMAX Beamline
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : A Free Electron Laser (FEL), is a device that generates extremely coherent and brilliant radiation using electrons accelerated to relativistic velocities in a particle accelerator. The process utilises similar equipment to what is used at a synchrotron source like MAX IV, but in addition there is an interaction between the relativistic electron beam and the generated radiation to achieve an exponential growth in radiation intensity. READ MORE
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3. Modelling Micropollutant Removal Through Ozonation in Wastewater
University essay from Lunds universitet/Kemiteknik (CI)Abstract : Proper management of water resources is a key to climate change adaptation and resilience in modern societies. Adequate treatment of wastewater is essential for ensuring the sustainability of the water cycle and the health of the environment and the ecosystems that inhabit it. READ MORE
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4. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE
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5. Modeling the penetration of fragmented shaped charge jets
University essay from Uppsala universitet/MaterialfysikAbstract : The penetration power of a shaped charge is an important characteristic in determining its capability. A model has previously been developed by FOI to analytically predict the penetration of a shaped charge jet striking a target at varying stand-off distances. READ MORE