Essays about: "läckströmmen"
Found 3 essays containing the word läckströmmen.
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1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE
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2. Investigation of Gallium Nitirde High Electron Mobility Transistors
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. READ MORE
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3. Leakage current and breakdown of HfO2/InGaAs MOS capacitors
University essay from Lunds universitet/Fysiska institutionenAbstract : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. READ MORE
