Essays about: "scanning tunneling microscopy"

Showing result 6 - 10 of 36 essays containing the words scanning tunneling microscopy.

  1. 6. The STM Study of Bi Adsorption on the InAs(111)B Surface

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Jung-Ching Liu; [2019]
    Keywords : bismuth; indium arsenide 111 B; adsorption; surface; scanning tunneling microscopy; Physics and Astronomy;

    Abstract : Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. READ MORE

  3. 7. Electron Assisted Growth of Graphene atop Ir(111) supported Hexagonal Boron Nitride

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Lassi Linnala; [2019]
    Keywords : Two-dimensional materials; Two-dimensional heterostructures; Graphene; hexagonal Boron Nitride; STM; LEED; Physics and Astronomy;

    Abstract : Vertical heterostructures between graphene (Gr) and hexagonal boron nitride (hBN) have attracted a great deal of interest, due to their potential applications in the semiconductor industry as new and superior transistor materials. The direct growth of the heterostucture still remains challenging and in this bachelor thesis, I report a novel electron assisted growth technique, which is used to attempt to grow Gr atop hBN atop an Ir(111) single crystal surface. READ MORE

  4. 8. Ultra-Thin Ag Films on the Sn/Si(111)-√3×√3 Surface Studied by STM

    University essay from Karlstads universitet/Institutionen för ingenjörsvetenskap och fysik (from 2013)

    Author : Rasmus Lavén; [2018]
    Keywords : Silver; Silicon; Tin; Metal-semiconductor interfaces; Thin metal films; Scanning tunneling microscopy; Quantum size effects;

    Abstract : The growth of atomically flat silver films on Si(111) usually requires a two-step growth, including deposition at low temperature (≈100 K) followed by slowly annealing to room temperature. In addition, flat silver films are usually only obtained on Si(111) for film thicknesses larger than the critical thickness of 6 monolayer. READ MORE

  5. 9. Using gallium nitride nanowires as STM probes

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Karolis Sulinskas; [2018]
    Keywords : STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

    Abstract : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. READ MORE

  6. 10. Water assisted CO intercalation underneath Ir(111) supported graphene studied with scanning tunneling microscopy

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Kaivalya Mevada; [2018]
    Keywords : Graphene; Intercalation; STM; CVD; TPG; Physics and Astronomy;

    Abstract : Graphene have attracted attention recently due to its unique properties and opportunities for development of high performance carbon based devices. The intercalation, absorption and reactions processes of small molecules above and below the graphene islands hold the key for new perspectives in catalysis, molecular sensors and other technologies. READ MORE