III-V Nanowire MOSFETs for mm-Wave Switch Applications

Abstract: RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. This work investigates the design trade-off's for III-V nanowire MOSFET technology for mm-wave switch circuits. In the thesis, simulation results for three different switch designs are compared. These are a standard single-pole double throw, with one respectively two resonant pairs, and a switch that uses high internal impedance to improve the isolation. The results show figures of merits that are comparable to state-of-the-art designs and indicates the need for further work in this area as to validate the simulations with measurements on processed devices.