Essays about: "Fast Switching Devices"
Showing result 1 - 5 of 12 essays containing the words Fast Switching Devices.
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1. Exploring Ethernet Switching Architectures for Area-Efficient Low-End Switches
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The aim of this thesis project has been to develop an architecture for L2 ethernet switches that would be optimized for silicon area, targeting smaller low-end switches. A selection was made of three different switching architectures, which were compared and analyzed to explore the benefits and drawbacks of different approaches. READ MORE
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2. Authentication Techniques Based on Physical Layer Attributes
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Authentication is an indispensable part of information security. It serves to distinguish legitimate users from unauthorized ones. With the rapid growth of Internet of Things (IoT) devices, authentication of wireless communication is gathering more and more attention. READ MORE
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3. Model verification and common mode current analysis of grid connected three phase two level converters
University essay from Lunds universitet/Industriell elektroteknik och automationAbstract : In this Master’s thesis an in-depth model of a shunt active filter for high frequency analysis is constructed. The purpose is to enable analysis of higher frequency behavior reaching 1MHz. Using the high frequency model, common mode currents can be simulated. READ MORE
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4. Investigation of Resistive Random Access Memory for 1T1R Nanowire Array Integration
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : As modern electronics have started to reach its physical scaling limits, novel architectures and physics is needed to meet future demands. Oxide-based Resistive Random Access Memory (RRAM) is a new emerging technology that uses filament formation and rupture in thin oxides to generate resistive switching. READ MORE
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5. HfO2 and ITO Resistive Random-Access Memory
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantifies performance according to standard figures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. READ MORE