Essays about: "HfO2"

Showing result 6 - 10 of 12 essays containing the word HfO2.

  1. 6. InAs and high-k oxides, a scanning tunnelling study of their interfaces

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Mattias Åstrand; [2018]
    Keywords : Semiconductor; High-k; Atomic layer deposition; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy; Physics and Astronomy;

    Abstract : In order for semiconductor materials to be suitable for implementation in new and progressive devices they have to be of better electronic characteristics than currently used materials, and maintain these once treated and put into action. It is important to verify that bulk characteristics are not hindered at the surface when a given semiconductor is put in contact with another material due to necessity. READ MORE

  3. 7. Leakage current and breakdown of HfO2/InGaAs MOS capacitors

    University essay from Lunds universitet/Fysiska institutionen

    Author : Edvin Winqvist; [2015]
    Keywords : breakdown; leakage; ingaas; hfo2; Physics and Astronomy;

    Abstract : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. READ MORE

  4. 8. Current voltage characterization of high-k oxide on InGaAs substrate

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Muhammad Ismail; [2014]
    Keywords : Physics and Astronomy;

    Abstract : Abstract Metal oxide semiconductor (MOS) capacitor was fabricated on the InGaAs substrate with Al2O3/HfO2 gate oxide. InGaAs is one of the promising candidates for advanced applications which require the lower power supply and high frequency. READ MORE

  5. 9. Fabrication and Characterization of Tunneling Oxides on Graphene

    University essay from KTH/Mikroelektronik och tillämpad fysik, MAP

    Author : Melkamu Belete; [2013]
    Keywords : ;

    Abstract : Graphene base transistors (GBTs) are known to be novel devices mingling outstanding properties of graphene, with the concept of hot electron transistors (HETs). According to theoretical calculations, GBTs were predicted to have over 5 orders of magnitude ON/OFF current ratios and THz frequency range operations. READ MORE

  6. 10. Optimization of High-k films on Si Substrate : fabrication and characterization

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Aein Shiri Babadi; [2012]
    Keywords : metal oxide semiconductor capacitors; Technology and Engineering;

    Abstract : In the present diploma project work, metal oxide semiconductor capacitors were fabricated on Silicon substrate. The oxide layer was formed by atomic layer deposition of high permittivity materials, HfO2 and Al2O3. The high-k films were grown using 65 ALD cycles at various deposition temperatures. READ MORE