Essays about: "bandgap"
Showing result 6 - 10 of 62 essays containing the word bandgap.
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6. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. READ MORE
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7. A Comparison Between Applied Square and Ring CSRR on SIW Using the HOM Method
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : The rise of connected devices and the internet of things has increased the need for systems capable of transmitting high frequency signals wirelessly. An important part of these systems are the filters. Filters remove signals within unwanted frequency ranges. These filters can be implemented using e. READ MORE
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8. First principles DFT study of polyethylene insulation containing chemical impurities - implementing counterpoise correction
University essay from KTH/Tillämpad fysikAbstract : Density functional theory (DFT) calculations of polyethylene (PE) HVDC cable insulation have been performed for systems containing four different chemical impurities: acetophenone, cumene, $\alpha$-methyl styrene and $\alpha$-cumyl alcohol. Systems were generated by molecular dynamics (MD) equilibration at four different temperatures relevant for cable insulation applications: 277 K, 293 K, 343 K and 363 K. READ MORE
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9. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE
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10. Investigation of Gallium Nitirde High Electron Mobility Transistors
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. READ MORE
