Essays about: "quantum gate"
Showing result 6 - 10 of 35 essays containing the words quantum gate.
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6. Transversal Construction of Topological Gates on Multiqubit Quantum Codes
University essay from Uppsala universitet/MaterialteoriAbstract : We study the possibility of constructing quantum gates using topological phases, which originate from local SU(2) evolution of entangled multiqubit systems. For this purpose, logical codewords using two-, three- and nine-qubit entangled states are defined and possible implementations of topological gates on these codes, are examined. READ MORE
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7. Femtosecond-laser Written Integrated Optical Devices for Quantum Circuits
University essay from KTH/Tillämpad fysikAbstract : Integrated quantum photonic circuits have gained increasing interest in the field of quantum information, due to their compactness, the intrinsic stability and the potential scalability. Photons are the promising candidate for quantum information processing. READ MORE
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8. Fabrication and Characterization of Quantum-well Field Effect Transistor
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. READ MORE
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9. Implementing two-qubit gates along paths on the Schmidt sphere
University essay from Uppsala universitet/MaterialteoriAbstract : Qubits (quantum bits) are what runs quantum computers, like a bit in classical computers. Quantum gates are used to operate on qubits in order to change their states. As such they are what ”programmes” a quantum computer. READ MORE
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10. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE