Essays about: "semiconductor of silicon"

Showing result 1 - 5 of 65 essays containing the words semiconductor of silicon.

1. 1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Agnimitra Saha; [2023]
   Keywords : Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

   Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE

3. 2. Ion Induced Particle Desorption From Self Supporting Nanomembranes : Influence of Different Geometries and Particle Types

   University essay from Uppsala universitet/Tillämpad kärnfysik

   Author : Jonas Beling; [2023]
   Keywords : ion; physics; ion physic; scattering; desorption; sputtering; jon; fysik; jonfysik;

   Abstract : Nanoelectronics is a field undergoing rapid development, meaning knowledge of the materials and methods used in nano-scale systems is a driving force in the industry. Silicon is a well known material in nanoelectronics commonly used as a semiconductor and is therefore a good representative for nanomaterials in general. READ MORE

4. 3. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Hanyu Liu; Xi Chen; [2023]
   Keywords : nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Abstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE

5. 4. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Elochukwu Mbah; [2023]
   Keywords : Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

   Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE

6. 5. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

   University essay from KTH/Tillämpad fysik

   Author : Elaheh Aghajafari; [2023]
   Keywords : III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

   Abstract : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. READ MORE