Essays about: "Annealing oxides"

Showing result 11 - 13 of 13 essays containing the words Annealing oxides.

  1. 11. Surface Chemistry and Electrical properties of nanowire devices

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Synkrotronljusfysik

    Author : Jalil Shah; [2013]
    Keywords : Nanowires; InAs; InP; Scanning Tunneling Microscopy; PEEM; Conductivity; Surface Oxides; Physics and Astronomy;

    Abstract : Surface chemistry and electrical properties of InAs and InP III-V semiconductor nanowires and nanowire based devices were studied using Scanning Tunneling Microscopy (STM) and Spectroscopic Emission and Low Energy Electron Microscopy (SPELEEM). Changes of the surface as well as electrical properties in these devices as a function of annealing temperature under atomic hydrogen background were studied and discussed. READ MORE

  3. 12. Study of Total Oxygen Content and Oxide composition Formed During Water Atomization of Steel Powders due to Manganese Variation.

    University essay from KTH/Materialvetenskap

    Author : Krishnan Hariramabadran Anantha; [2012]
    Keywords : Water Atomization - Powder Metallurgy;

    Abstract : Powder metallurgy (PM) is a technology used to manufacture near net shape components for an increasing number of applications like automobile components, aircraft components, cutting tools, refractory, household appliances, etc. The general PM process comprises of Powder manufacturing/powder tailoring, Compacting, and Sintering. READ MORE

  4. 13. Thermal Stability of Zr-Si-N Nanocomposite Hard Thin Films

    University essay from Nanostrukturerade material

    Author : Nai-Yuan Ku; [2010]
    Keywords : Zr-Si-N films; Nanocomposite hard coatings; Nanostructure; Magnetron sputtering; Hardness; Mechanical property; Thermal stability; Annealing; Transmission electron microscopy; X-ray diffraction; Nanoindentation; Elastic recoil detection analysis;

    Abstract : Mechanical property and thermal stability of Zr-Si-N films of varying silicon contents deposited on Al2O3 (0001) substrates are characterized. All films provided for characterization were deposited by reactive DC magnetron sputter deposition technique from elemental Zr and Si targets in a N2/Ar plasma at 800 oC. READ MORE