Essays about: "Gate-all-around"

Found 4 essays containing the word Gate-all-around.

  1. 1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Hanyu Liu; Xi Chen; [2023]
    Keywords : nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

    Abstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE

  3. 2. A Simulation Study of Variability in Gate-all-Around Nanosheet Transistors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Virinchi Tirumaladass; [2022]
    Keywords : Gate-all-around; Nanosheet field effect transistors; process variations; variability; TCAD; Gate-all-around; Nanoblad fälteffekttransistorer; processvariationer; variabilitet; TCAD;

    Abstract : Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short channel effects (SCEs) due to their superior control over the channel and their large effective channel width. READ MORE

  4. 3. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Sofie Johannesson; Sebastian Skog; [2022]
    Keywords : Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

    Abstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE

  5. 4. Low-Frequency Noise in InGaAs Nanowire MOSFETs

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Christian Mario Möhle; [2017]
    Keywords : Physics and Astronomy;

    Abstract : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. READ MORE