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Showing result 1 - 5 of 6 essays matching the above criteria.
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1. Fabrication and Characterization of 4H-SiC MOS Capacitors with Different Dielectric Layer Treatments
University essay from Linköpings universitet/HalvledarmaterialAbstract : 4H-SiC based Metal-Oxide Semiconductor(MOS) capacitors are promising key components for next generation power devices. For high frequency power applications, however, there is a major drawback of this type of devices, i.e. READ MORE
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2. Fabrication and electrical characterization of Ge/GeOx/Al2O3/HfO2 MOS capacitors
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : Continuous scaling of complementary metal oxide semiconductor (CMOS) devices has led to constant increase in device performance. However, as scaling becomes more difficult with every technological node, alternative channel materials that could replace silicon (Si) are being investigated [1]. READ MORE
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3. InAs MOS capacitors;Fabrication & Characterization
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikAbstract : The down scaling of metal-oxide-semiconductor based devices has been halted by the shortcomings of silicon. To enable further miniaturization new materials are required. The proposed replacements include compound III-V semiconductors and high-k oxides, the implementation of which has been difficult. READ MORE
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4. Leakage current and breakdown of HfO2/InGaAs MOS capacitors
University essay from Lunds universitet/Fysiska institutionenAbstract : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. READ MORE
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5. Single Crystalline CVD Diamond Based Devices for Power Electronics Applications
University essay from Uppsala universitet/ElektricitetsläraAbstract : Chemical vapor deposited single-crystalline diamond has rare material properties such as thermal conductivity five times as high as copper, a wide band gap, a high breakdown field and high carrier mobilities. This makes it a very interesting material for high power, high frequency and high temperature applications. READ MORE
