Essays about: "HSQ"

Showing result 1 - 5 of 6 essays containing the word HSQ.

  1. 1. On analysis of HSQ steel beams combined with a CLT flooring system

    University essay from KTH/Bro- och stålbyggnad

    Author : Yasir Zahid; Yasir Zeito; [2023]
    Keywords : ;

    Abstract : With the aspiration of modern-day society to achieve a more environmentally friendly andsustainable world, several industries of the world are continuously and constantly examiningdifferent possibilities to reduce the climate impact of the world. For the construction industry,this is no different. READ MORE

  3. 2. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Azal Alothmani; [2018]
    Keywords : Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

    Abstract : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. READ MORE

  4. 3. Fabrication and Charaterisation of Finger Gates

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Daniel Svedbrand; [2017]
    Keywords : Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Abstract : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. READ MORE

  5. 4. Hall Measurement on Regrown Nanowires

    University essay from Lunds universitet/Fysiska institutionen

    Author : Sudhakar Sivakumar; [2015]
    Keywords : Hall measurement; InGaAs; III-V semiconductor; ballistic; transport properties; mobility; sheet carrier concentration; Physics and Astronomy;

    Abstract : Ternary semiconductor alloys like $In_xGa_{1-x}As$ have lured competing attention in connection to sub-50 nm high performance, low power, planar Complementary Metal Oxide Semiconductor technology. This compound semiconductor owes its popularity to excellent bulk carrier mobility, minority carrier diffusion constant, small bandgap, high electron injection velocity and its capability to take Moore's law beyond silicon platform. READ MORE

  6. 5. Development of a single-step fabrication process for nanoimprint stamps

    University essay from Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE)

    Author : Khan Mohammad Moniruzzaman; [2011]
    Keywords : ;

    Abstract : In this work we have investigated and developed an uncomplicated one step fabrication method to construct Nanoimprint Lithography (NIL) stamps with sub-100nm resolution. The fabrication method includes Electron Beam Lithographical (EBL) patterning using negative tone resist Hydrogen Silsesquioxane (HSQ). READ MORE