Essays about: "transistor"

Showing result 21 - 25 of 184 essays containing the word transistor.

  1. 21. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Rungeng Xu; [2022]
    Keywords : E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Abstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE

  3. 22. Investigating the use of Semiconductor Nanowires for Neural Networks

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Alfredo Serafini; [2022]
    Keywords : FDTD method and simulation; optical broadcasting neural network; optical communication of nanowires; sub-wavelength absorption.; Physics and Astronomy;

    Abstract : In this work, we intend to employ nanowires for the realisation of an artificial neuron which can be used to design a neural network that will guide the new generation of non-von Neumann architectures such as Neuromorphic Computing. Possible applications are strongly related to Neuromorphic architectures and artificial intelligence, such as high-performance computers, robotics hardware and autonomous drones. READ MORE

  4. 23. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Hithiksha Krishna Murthy; [2022]
    Keywords : Gallium nitrate; High Mobility Electron Transistor; Silicon carbide; Silicon; Sapphire; substrates; power electronics;

    Abstract : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. READ MORE

  5. 24. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Patrik Blomberg; Ludvig Pile; [2022]
    Keywords : D-band; Power Amplifier; Pseudo-differential common source; Stacked; Vertical InGaAs nanowire; MOSFET; Technology and Engineering;

    Abstract : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. READ MORE

  6. 25. Analysis of condition for ALD deposition of ferroelectric HZO

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Teodor Qvint; [2022]
    Keywords : HZO; Ferro; ALD; Temperature; Purge time; Technology and Engineering;

    Abstract : Deposition of ferroelectric hafnium zirconium oxide (HZO) on semiconductor samples with Atomic Layer Deposition (ALD) has proven to be a viable method of production. But while the physical processes of ALD deposition is relatively well know, there exists some gaps in knowledge about different parameters for the ALD and the resulting depositions. READ MORE