Essays about: "FinFET Fin Field Effect Transistor"

Found 3 essays containing the words FinFET Fin Field Effect Transistor.

  1. 1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Hanyu Liu; Xi Chen; [2023]
    Keywords : nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

    Abstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE

  3. 2. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Limitha Subbaiah Kumar Nangaru; [2022]
    Keywords : CMOS Complementary Metal Oxide Semiconductors ; DRC Design Rule Check ; Process Corners; FinFET Fin Field Effect Transistor ; IC Integrated Circuit ; LVS Layout Versus Schematic ; Monte Carlo; Nominal Voltage; PDK Process Design Kit ; Power Delay Product; Read Bit Line; Read Word Line; SoC System on Chip ; SRAM Static Random Access Memory ; Threshold Voltage; Technology and Engineering;

    Abstract : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. READ MORE

  4. 3. Epitaxial growth and processing of high-aspect ratio InGaAs fins for advanced MOSFETs

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Andreas Malmgren; [2017]
    Keywords : FinFET; metalorganic vapor phase epitaxy; reciprocal space mapping; Technology and Engineering; Physics and Astronomy;

    Abstract : In this thesis, InGaAs fins with vertical sidewalls consisting of {110} facets were epitaxially grown on InP(111)B substrates using metalorganic vapor phase epitaxy. A lithography patterned hydrogen silsesquixane growth mask was used to promote the formation of vertical {110} facets during the growth. READ MORE