Essays about: "FinFET"
Showing result 1 - 5 of 11 essays containing the word FinFET.
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1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE
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2. A Simulation Study of Variability in Gate-all-Around Nanosheet Transistors
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short channel effects (SCEs) due to their superior control over the channel and their large effective channel width. READ MORE
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3. Investigation on the Optimization of GaN Etching for FinFET Applications
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : In the framework of this thesis, the optimization of the etching process of GaN for FinFET applications has been investigated. FinFETs are transistors with a vertical architecture in the shape of fins. These fins are fabricated by etching a pattern into a GaN substrate. The etching is carried out in two steps, a dry etch and a wet etch. READ MORE
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4. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. READ MORE
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5. Low power memory controller subsystem IP exploration using RTL power flow : An End-to-end power analysis and reduction Methodology
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : With FinFET based Application Specific Integrated Circuit (ASIC) designs delivering on the promises of scalability, performance, and power, the road ahead is bumpy with technical challenges in building efficient ASICs. Designers can no longer rely on the ‘auto-scaling’ power reduction that follows technology node scaling, in these times when 7nm presents itself as a ‘long-lived’ node. READ MORE