Essays about: "III-V Nanowire MOSFET"

Showing result 6 - 9 of 9 essays containing the words III-V Nanowire MOSFET.

  1. 6. Low-Frequency Noise in InGaAs Nanowire MOSFETs

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Christian Mario Möhle; [2017]
    Keywords : Physics and Astronomy;

    Abstract : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. READ MORE

  3. 7. Fabrication and Charaterisation of Finger Gates

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Daniel Svedbrand; [2017]
    Keywords : Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Abstract : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. READ MORE

  4. 8. Vertical heterostructure III-V nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Adam Jönsson; [2016]
    Keywords : MOSFET; transistor; heterostructure; III-V; RF; semiconductor; silicon; fabrication; electronics; Technology and Engineering;

    Abstract : If cars had developed as fast as processors they would go at 470,000 mph, get 100,000 miles to the gallon, and cost 3 cents" claims Paul Ottelini, Intel CEO 2005-2013. This serves as a reminder of how fast the field of nanoelectronics is developing due to constant demand for faster and more energy efficient integrated circuits. READ MORE

  5. 9. Low-Frequency Noise in TFETs

    University essay from Lunds universitet/Fysiska institutionen

    Author : Markus Hellenbrand; [2015]
    Keywords : Tunnel Field-Effect Transistor; Steep-Slope Devices; III-V; InAs; GaSb; Broken Band Gap; Physics and Astronomy;

    Abstract : Nanowire tunnel field-effect transistors (TFETs) were investigated by carrying out noise measurements and low-temperature DC measurements. The TFET tunnelling junction was realised by a GaSb/InAs heterojunction resulting in a broken band gap. TFET noise currents were measured at frequencies between 10 Hz and 1 kHz. READ MORE