Essays about: "InAs nanowires"
Showing result 1 - 5 of 29 essays containing the words InAs nanowires.
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1. Optical Communication using Nanowires and Molecular Memory Systems
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/SynkrotronljusfysikAbstract : Neuromorphic computational networks, inspired by biological neural networks, provide a possible way of lowering computational energy cost, while at the same time allowing for much more sophisticated devices capable of real-time inferences and learning. Since simulating artificial neural networks on conventional computers is particularly inefficient, the development of neuromorphic devices is strongly motivated as the reliance on AI-models increases. READ MORE
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2. Developing an Ar milling process to improve the contact quality to InAs nanowires
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikAbstract : The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). READ MORE
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3. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds
University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysikAbstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE
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4. Thermoelectric measurements on InAs nanowires with a ratchet-barrier
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikAbstract : Efficient extraction of thermal energy from electrons at the micro- and nanoscale is a long-standing scientific goal that could enable novel types of heat engines, heat management, and solar cell applications. Semiconductor nanowires are a promising system for investigating such devices for several reasons, such as their thermoelectric properties, and the potential to be grown in heterostructures with high flexibility. READ MORE
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5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE
