Essays about: "what is transistors"

Showing result 1 - 5 of 29 essays containing the words what is transistors.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Ivan Krsic; [2023]
    Keywords : HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE

  3. 2. Novel Method of ASIC interface IP development using HLS

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Anestis Athanasiadis; Chandranshu Mishra; [2023]
    Keywords : High Level Synthesis; HLS; Untimed C ; Control logic; I3C; clock-accurate design; IP development; Technology and Engineering;

    Abstract : High-Level Synthesis(HLS) is a design methodology that enables designers to implement hardware from high-level coding languages, such as C, C++, or System C. It provides designers with the ability to convey their design at a higher level of abstraction, which allows more emphasis on an algorithm and functional aspects of design instead on low-level hardware details. READ MORE

  4. 3. Flashlamp Annealing for Improved Ferroelectric Junctions

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Theodor Blom; [2023]
    Keywords : Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Abstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE

  5. 4. High Level Synthesis for ASIC and FPGA

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Malin Heyden; [2023]
    Keywords : HLS; high level synthesis; asic; fpga; catapult; filter; sfir; Technology and Engineering;

    Abstract : This thesis aims to evaluate the performance of Siemens’ High Level Synthesis (HLS) tool Catapult. HLS can be considered the next step up in abstraction level from writing traditional Register Transfer Level (RTL) code which is time consuming and error prone. READ MORE

  6. 5. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Shengpeng Huang; [2023]
    Keywords : indium antimonide; surface reconstructions; bismuth deposition; scanning tunneling microscopy; X-ray photoelectron spectroscopy.; Physics and Astronomy;

    Abstract : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. READ MORE